Hall Effect Measurement System

DX-50 Hall Effect Measurement System

Electromagnet-based Hall measurement system for determining carrier concentration, mobility, resistivity and Hall coefficient in semiconductor and related materials.

The DX-50 Hall effect measurement system combines a variable electromagnet, precision current source and high-resolution voltmeter with a dedicated Hall sample holder and standard reference samples. It is designed to extract key transport parameters including carrier concentration, Hall mobility, resistivity and Hall coefficient under well-controlled magnetic field and current conditions.

Measurement control and data reduction are handled by system software that automates parameter calculation and supports I–V and BV curve acquisition. This makes the DX-50 suitable for university teaching labs, research institutes and industrial R&D environments where reliable, repeatable Hall measurements are required.

Key Features

  • Electromagnet-based Hall effect system with configurable pole spacing.
  • Integrated high-precision constant current source and high-resolution voltmeter.
  • Wide carrier concentration measurement range from 10³ cm⁻³ to 10²³ cm⁻³.
  • Resistivity range from 10⁻⁷ Ω·cm to 10¹² Ω·cm.
  • Automatic software calculation of Hall and resistivity parameters.
  • I–V and BV curve measurement capability.
  • One-button automatic measurement after test conditions are set.
  • Measurement results exportable to Excel for further analysis.

Technical Specifications

SpecificationValue
Measurement Parameters
Carrier concentration10³ cm⁻³ – 10²³ cm⁻³
Mobility0.1 cm²/V·s – 10⁸ cm²/V·s
Resistivity range10⁻⁷ Ω·cm – 10¹² Ω·cm
Hall voltage1 µV – 3 V
Hall coefficient10⁻⁵ – 10²⁷ cm³/C
Magnetic System
Magnet typeVariable electromagnet
Magnetic field strength (typical)1070 mT @ 10 mm, 687 mT @ 20 mm, 500 mT @ 30 mm, 378 mT @ 40 mm, 293 mT @ 50 mm
Field uniformity≈ 1% over defined area
Electrical System
Current source range±0.1 nA – ±1000 mA
Current source resolution0.001 µA
Voltage range±10 nV – ±200 V
Voltage measurement resolution0.0001 mV
Physical / Mechanical
Sample sizeUp to 30 mm × 30 mm
Cabinet dimensionsApprox. 600 × 600 × 1000 mm

Applications

  • Semiconductor materials for transport-property characterisation.
  • Low resistance materials such as metals and conductive oxides.
  • High resistance materials including semi-insulating compounds.
  • P-type and N-type materials for conductivity type verification.